mbr3030ct thru mbr3060ct 30 a mp rectifier 3 0 to 6 0 v o lts features ? o pe r ating t e m pe r atu r e: - 5 5 c to +15 0 c ? sto r age t e m pe r atu r e: - 5 5 c to +1 75 c mcc part number ma x i m um r c u r r ent peak reverse voltage maximum rms voltage maximum dc blocking voltage mb r 3030 ct 3 0v 21 v 30 v mb r 3035 ct 35 v 24.5 v 35 v mb r 3040 ct 40v 28v 40v mb r 3045 ct 45 v 31.5 v 45 v mb r 30 5 0 ct 5 0v 35 v 5 0 v mbr30 6 0 ct 6 0v 42 v 6 0 v schottky barrier max i mum rat i n gs metal of silicon rectifier, majo ri ty carrier conducto n guard ring for transient protection low power loss high efficiency high surge capacity, high current capability inches mm
a .560 . 625 14. 22 15. 88 b .380 . 420 9.6 5 10. 67 c . 100 . 135 2.54 3. 43 d . 230 . 270 5.84 6.86 e . 380 . 420 9.65 10.67 f ------ . 250 --- --- 6.35 g . 500 . 580 12.70 14.73 h . 090 . 110 2.29 2.79 i . 020 . 045 0.51 1.14 j . 012 . 025 0.30 0.64 k . 139 . 161 3.53 4.09 l . 140 . 190 3.56 4.83 m . 045 . 055 1.14 1. 40 n . 080 .115 2.03 2.92 pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h e lect r ical cha r acte r istics @ 2 5 c u nless o t he r w ise s p ecified average forward current i f(av) 30 a t c = 1 0 0 c peak f o r w a r d su r ge cu rr ent i fsm 2 0 0 a 8.3 m s , half s i ne ma x i m um in s tantaneous forward voltage m a x i m u m d c reverse current at rated dc blocking voltage i r 0.2 m a t j = 25 c typical junction capacitance c j mea s u r ed at 1.0mhz, v r =4.0v mbr30 3 0 ct -3045 ct mbr30 50ct-3060ct . 84 v . 95 v mbr3030ct-3045ct MBR3050CT-3060ct 400pf 450pf to-220ab mbr3030ct-3045ct MBR3050CT-3060ct .7 2 v .8 5 v pin 13 2 t j = 1 25 c i fm = 30 .0a; t j = 25 c v f www.kersemi.com
fig.2 - maximum non-repetitive surge current number of cycles at 60hz peak forward surge current, amperes 1 5 10 50 100 2 20 0 50 100 150 200 250 300 fig.1 - forward current derating curve average forward current amperes 25 75 100 125 150 10 0 50 40 175 percent of rated peak reverse voltage ,(%) fig.3 - typical reverse characteristics instantaneous reverse current ,(ma) 20 40 120 140 0.001 0.1 1.0 100 10 60 80 100 t j = 125 c 0.01 t j = 25 c 8.3ms single half-sine-wave (jedec method) 30 0 20 resistive or inductive load instantaneous forward voltage , volts fig.4 - typical forward characteristics instantaneous forward current ,(a) 0.2 0.3 0.7 0.8 1.0 10 100 0.4 0.5 0.6 0.1 1.0 0.9 instantaneous forward voltage , volts instantaneous forward current ,(a) 0.1 1.0 10 100 0.1 pulse width 300us 2% duty cycle t j = 25 c mbr3030ct ~ mbr3045ct MBR3050CT ~ mbr3060ct fig.5 - typical junction capacitance capacitance , (pf) reverse voltage , volts 10 1 100 10000 1000 100 0.1 case temperature , c 0 mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct mbr3030ct ~ mbr3045ct MBR3050CT ~ mbr3060ct mbr3030ct ~ mbr3045ct 4 t j = 25 c, f= 1mhz rating and characteristic curves mbr3030ct thru mbr3060ct www.kersemi.com
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